2SK1052 |
Part Number | 2SK1052 |
Manufacturer | Inchange Semiconductor |
Description | ·Drain Current –ID=0.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design... |
Features |
(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=0.3A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
VSD
Forward On-Voltage
IS=0.5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=0.3A; RL=50Ω
toff
Turn-off time
2SK1052
MIN TYP. MAX UNIT
450
V
2.0
3.0
V
5.5
7.0
Ω
±100 nA
1
mA
1.8
V
8
ns
18
ns
70
ns
100
ns
Notice: ISC reserves the ri... |
Document |
2SK1052 Data Sheet
PDF 200.38KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK105 |
NEC |
N-Channel FET | |
2 | 2SK1052 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1053 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK1053 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1056 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |