High speed power switching REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.3 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 12.
• Low on-resistance RDS (on) = 0.3 Ω typ.
• Low drive current
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
123
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8
2SJ527(L), 2SJ527(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temp.
2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Feature.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ527 |
Renesas |
P-Channel MOSFET | |
2 | 2SJ527 |
Hitachi Semiconductor |
P-Channel MOSFET | |
3 | 2SJ527S |
Hitachi Semiconductor |
P-Channel MOSFET | |
4 | 2SJ527S |
Renesas |
P-Channel MOSFET | |
5 | 2SJ520 |
Sanyo Semicon Device |
P-Channel MOSFET | |
6 | 2SJ522 |
Sanyo Semicon Device |
P-Channel MOSFET | |
7 | 2SJ525 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
8 | 2SJ526 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
9 | 2SJ526 |
INCHANGE |
P-Channel MOSFET | |
10 | 2SJ528 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
11 | 2SJ528L |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
12 | 2SJ528S |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |