2SJ528L - Hitachi Semiconductor

2SJ528L Silicon P-Channel MOSFET

2SJ528(L),2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C) Item Drai.

Features

• Low on-resistance RDS(on) = 0.17 Ω typ.
• 4 V gete drive devices
• High speed switching Outline DPAK
  –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings
  –60 ±20
  –7
  –28
  –7
  –7 4.2 20 150
  –55 to +150 Unit V V A A A A mJ W °C °C.