2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (.
• Low on-resistance R DS(on) = 0.3 Ω typ.
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
DPAK-1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ527(L),2SJ527(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings
–60 ±20
–5
–20
–5
–5 2.1 20 150
–55 to +150
Unit V .
High speed power switching REJ03G0877-0300 (Previous: ADE-208-640A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ520 |
Sanyo Semicon Device |
P-Channel MOSFET | |
2 | 2SJ522 |
Sanyo Semicon Device |
P-Channel MOSFET | |
3 | 2SJ525 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | 2SJ526 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
5 | 2SJ526 |
INCHANGE |
P-Channel MOSFET | |
6 | 2SJ527L |
Hitachi Semiconductor |
P-Channel MOSFET | |
7 | 2SJ527L |
Renesas |
P-Channel MOSFET | |
8 | 2SJ527S |
Hitachi Semiconductor |
P-Channel MOSFET | |
9 | 2SJ527S |
Renesas |
P-Channel MOSFET | |
10 | 2SJ528 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
11 | 2SJ528L |
Hitachi Semiconductor |
Silicon P-Channel MOSFET | |
12 | 2SJ528S |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |