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2SJ527L |
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| Part Number | 2SJ527L |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive... |
| Features |
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –5 –20 –5 –5 2.1 20 150 –55 to +150 Unit V ... |
| Document |
 2SJ527L Data Sheet
PDF 54.18KB |
| Distributor | Stock | Price | Buy |
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