2SJ450 - Hitachi Semiconductor

2SJ450 P-Channel MOSFET

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • • • • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag.

Features

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• Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings
  –60 ±20
  –1
  –2
  –1 1 150
  –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using aluminium ceramic board (12.5 × 20 × 70 mm) 2 2SJ450 El.