2SJ246 - Hitachi Semiconductor

2SJ246 SILICON P-CHANNEL MOS FET

www.DataSheet4U.com 2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 3 • • • • Low on–resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain.

Features

12 3 12 3
•
•
•
• Low on
  –resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source.
• Suitable for Switching regulator, DC
  – DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) e DataShe DataSheet4U.com Symbol Ratings Unit ——————————————————————————————————————————— Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body
  –drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse)
* IDR Pch
*
* Tch Tstg
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