www.DataSheet4U.com 2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 1 2 3 • • • • Low on–resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter 12 3 2, 4 1 3 1. Gate 2. Drain 3. Source 4. D.
1 2 3
•
•
•
•
Low on
–resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC
– DC converter
12
3
2, 4
1
3
1. Gate 2. Drain 3. Source 4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
DataShee
DataSheet4U.com Symbol Ratings Unit ———————————————————————————————————————————
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body
–drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse)
* IDR Pch
*
* Tch Tstg
–.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ240 |
Toshiba |
Field Effect Transistor | |
2 | 2SJ243 |
NEC |
P-Channel MOSFET | |
3 | 2SJ244 |
Hitachi Semiconductor |
P-Channel MOSFET | |
4 | 2SJ244 |
Renesas |
P-Channel MOSFET | |
5 | 2SJ246 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET | |
6 | 2SJ247 |
Hitachi Semiconductor |
P-Channel MOSFET | |
7 | 2SJ248 |
Hitachi Semiconductor |
P-Channel MOSFET | |
8 | 2SJ200 |
Toshiba Semiconductor |
P-Channel MOSFET | |
9 | 2SJ201 |
Toshiba Semiconductor |
P-Channel MOSFET | |
10 | 2SJ202 |
NEC |
P-Channel MOSFET | |
11 | 2SJ203 |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
12 | 2SJ203 |
Guangdong Kexin Industrial |
MOS Fied Effect Transistor |