2SJ243 - NEC

2SJ243 P-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving systems, 1.6 ± 0.1 PACKAGE DI.

Features

• Small mounting area: about 60 % of the conventional mini-mold package (SC-70)
• Can be directly driven by 3-V IC
• Can be automatically mounted 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 EQUIVALENT CIRCUIT Drain (D) The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be applied across the gate and source in the actual circuit, a gate protection circuit such as an external constant-voltage diode is necessary. Gate (G) Gate protection diode Source (.