2SJ244 - Hitachi Semiconductor

2SJ244 P-Channel MOSFET

2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ244 Absolute Maximum Ratings (Ta = 25°C) Item Dr.

Features

• Very Low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ244 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)
* Pch
* Tch Tstg 2 1 Ratings
  –12 ±7 ±2 ±4 1 150
  –55 to +150 Unit V V A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm).