2SJ172 - Hitachi Semiconductor

2SJ172 P-Channel MOSFET

2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Sourc.

Features

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• Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ172 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
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