2SJ170 - Inchange Semiconductor

2SJ170 P-Channel MOSFET Transistor

·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE.

Features

LECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6.5A IGSS Gate Source Leakage Current VGS= -16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -80V,VGS= 0 VSD Diode Forward Voltage IF=-12 A;VGS= 0 MIN MAX UNIT -50 V -2.0 -4 V 0.35 Ω -10 uA -0.25 mA -1.1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio.