2SJ177 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SJ177 A.
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SJ177
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I
*1
D(pulse)
IDR .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ170 |
Inchange Semiconductor |
P-Channel MOSFET Transistor | |
2 | 2SJ171 |
Inchange Semiconductor |
P-Channel MOSFET Transistor | |
3 | 2SJ172 |
Hitachi Semiconductor |
P-Channel MOSFET | |
4 | 2SJ174 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING | |
5 | 2SJ175 |
Hitachi Semiconductor |
P-Channel MOSFET | |
6 | 2SJ176 |
Hitachi |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING | |
7 | 2SJ178 |
NEC |
P-Channel MOSFET | |
8 | 2SJ179 |
NEC |
P-Channel MOSFET | |
9 | 2SJ103 |
Toshiba Semiconductor |
P-Channel MOSFET | |
10 | 2SJ104 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ105 |
Toshiba Semiconductor |
P-Channel MOSFET | |
12 | 2SJ106 |
Toshiba Semiconductor |
P-Channel MOSFET |