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2SJ172 |
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| Part Number | 2SJ172 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven ... |
| Features |
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ172 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch*... |
| Document |
 2SJ172 Data Sheet
PDF 42.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ170 |
Inchange Semiconductor |
P-Channel MOSFET Transistor |
|
| 2 | 2SJ171 |
Inchange Semiconductor |
P-Channel MOSFET Transistor |
|
| 3 | 2SJ174 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
|
| 4 | 2SJ175 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 5 | 2SJ176 |
Hitachi |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
|