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2SJ170 |
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| Part Number | 2SJ170 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATI... |
| Features |
LECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6.5A
IGSS
Gate Source Leakage Current
VGS= -16V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= -80V,VGS= 0
VSD
Diode Forward Voltage
IF=-12 A;VGS= 0
MIN MAX UNIT
-50
V
-2.0
-4
V
0.35
Ω
-10
uA
-0.25 mA
-1.1
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio... |
| Document |
 2SJ170 Data Sheet
PDF 193.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ171 |
Inchange Semiconductor |
P-Channel MOSFET Transistor |
|
| 2 | 2SJ172 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 3 | 2SJ174 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
|
| 4 | 2SJ175 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 5 | 2SJ176 |
Hitachi |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
|