Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD633 Collector-base voltage 2SD635 2SD633 VC.
DITIONS www.datasheet4u.com 2SD633 2SD635 SYMBOL MIN 100 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 1.5 2.0 2.5 V V V VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SD633 2SD635 ICBO Collector cut-off current 100 VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=7A ; VCE=3V 2000 1000 3.0 15000 µA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=45V;RL=15A 0.8 3.0 2.5 µs µ.
2SD635 - INCHANGE
·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD632 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD633 |
Toshiba Semiconductor |
NPN TRIPLE DIFFUSED TRANSISTOR |
|
| 3 | 2SD633 |
SavantIC |
(2SD633 / 2SD635) SILICON POWER TRANSISTOR |
|
| 4 | 2SD633 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD633P |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD634 |
Toshiba |
NPN Transistor |
|
| 7 | 2SD634 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD636 |
Panasonic |
(2SD636 / 2SD637) NPN Transistor |
|
| 9 | 2SD637 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD637 |
Panasonic |
(2SD636 / 2SD637) NPN Transistor |
|
| 11 | 2SD638 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD638 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|