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·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.
25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 3A; IB= 6mA VCB= 80V; IE= 0 2.5 V 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE-1 DC Current Gain IC= 3A ; VCE= 3V 2000 15000 hFE-2 DC Current Gain IC= 7A ; VCE= 3V 1000 Switching times ton .
2SD634 - Toshiba
: 2SD633 2SD634 I2SD635I SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD632 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD633 |
Toshiba Semiconductor |
NPN TRIPLE DIFFUSED TRANSISTOR |
|
| 3 | 2SD633 |
SavantIC |
(2SD633 / 2SD635) SILICON POWER TRANSISTOR |
|
| 4 | 2SD633 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD633P |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD635 |
SavantIC |
(2SD633 / 2SD635) SILICON POWER TRANSISTOR |
|
| 7 | 2SD635 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD636 |
Panasonic |
(2SD636 / 2SD637) NPN Transistor |
|
| 9 | 2SD637 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD637 |
Panasonic |
(2SD636 / 2SD637) NPN Transistor |
|
| 11 | 2SD638 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD638 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|