2SD637 - Panasonic Semiconductor

2SD637 Silicon NPN Transistor

Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 (Ta=25˚C) Ratings 60 50 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector t.

Features

q q q 1.5 R0.9 R0.9 0.85 (Ta=25˚C) Ratings 60 50 7 200 100 400 150
  –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg EIAJ:SC
  –71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Co.