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2SD635 |
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| Part Number | 2SD635 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB675 ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3A; IB= 6mA VCB= 60V; IE= 0
2.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
2000
15000
hFE-2
DC Current Gain
IC= 7A ; VCE= 3V
1000
Switching times
ton
... |
| Document |
 2SD635 Data Sheet
PDF 202.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD632 |
INCHANGE |
NPN Transistor |
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| 2 | 2SD633 |
Toshiba Semiconductor |
NPN TRIPLE DIFFUSED TRANSISTOR |
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| 3 | 2SD633 |
SavantIC |
(2SD633 / 2SD635) SILICON POWER TRANSISTOR |
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| 4 | 2SD633 |
INCHANGE |
NPN Transistor |
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| 5 | 2SD633P |
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PNP / NPN Epitaxial Planar Silicon Transistors |
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