2SD634 |
Part Number | 2SD634 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB674 ·Minimum Lot-to-Lot variations for robust device performance and r... |
Features |
25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3A; IB= 6mA VCB= 80V; IE= 0
2.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
2000
15000
hFE-2
DC Current Gain
IC= 7A ; VCE= 3V
1000
Switching times
ton
... |
Document |
2SD634 Data Sheet
PDF 202.89KB |
Distributor | Stock | Price | Buy |
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1 | 2SD632 |
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2 | 2SD633 |
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