2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zApplication Low frequency amplifier Storobo zExternal dimensions (Unit : mm) 4.0 3.0 2.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specificat.
1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 5 Collector current ICP 8 PC 400 Power siddipation Tj 150 Junction temperature Tstg Range of storage temperature −55 to +150 ∗ Single pulse, Pw=10ms Unit V V V A A∗ mW °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-base break.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2686 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
2 | 2SD2686 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SD2688LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SD2689 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | 2SD2689LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SD2600 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor | |
7 | 2SD2603 |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR | |
8 | 2SD2604 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
9 | 2SD2606 |
Panasonic |
SILICON NPN DIFFUSED TYPE TRANSISTOR | |
10 | 2SD2607 |
Rohm |
Power Transistor | |
11 | 2SD261 |
ETC |
Transistors | |
12 | 2SD2611 |
Rohm |
Power Transistor |