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Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington For power amplification Unit: mm s Features q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabling direct soldering of the radiating fin to the printed cir.
q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 500 400 12 14 7 50 1.4 Junction temperature S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2600 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor |
|
| 2 | 2SD2603 |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 3 | 2SD2604 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD2607 |
Rohm |
Power Transistor |
|
| 5 | 2SD261 |
ETC |
Transistors |
|
| 6 | 2SD2611 |
Rohm |
Power Transistor |
|
| 7 | 2SD2615 |
Rohm |
Power Transistor |
|
| 8 | 2SD2620J |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD2621 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|
| 10 | 2SD2623 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|
| 11 | 2SD2624 |
Sanyo Semicon Device |
NPN Transistor |
|
| 12 | 2SD2625V9 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|