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Ordering number : ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2079D [2SD2689LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 4.5 2.8 16.1.
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Package Dimensions
unit : mm 2079D
[2SD2689LS]
10.0 3.2
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
1 : Base 2 : Collector 3 : Emitter SA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2689 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SD2686 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SD2686 |
Toshiba |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SD2687S |
Rohm |
Transistors |
|
| 5 | 2SD2688LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SD2600 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor |
|
| 7 | 2SD2603 |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 8 | 2SD2604 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD2606 |
Panasonic |
SILICON NPN DIFFUSED TYPE TRANSISTOR |
|
| 10 | 2SD2607 |
Rohm |
Power Transistor |
|
| 11 | 2SD261 |
ETC |
Transistors |
|
| 12 | 2SD2611 |
Rohm |
Power Transistor |
|