2SD2687S |
Part Number | 2SD2687S |
Manufacturer | ROHM (https://www.rohm.com/) |
Description | 2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zApplication Low frequency amplifier Storobo zExternal dimensions (Unit : mm) 4.0 3.0 2.0 zFeatures 1) A collector current is large. 2... |
Features |
1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA
(15Min.)
3Min.
0.45
2.5 5.0
(1) (2) (3)
0.5
0.45
(1)Emitter(GND) (2)Collector(OUT) (3)Base(IN)
Taping specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 5 Collector current ICP 8 PC 400 Power siddipation Tj 150 Junction temperature Tstg Range of storage temperature −55 to +150
∗ Single pulse, Pw=10ms
Unit V V V A A∗ mW °C °C
zElectrical characteristics (Ta=25°C)
Parameter Collector-base break... |
Document |
2SD2687S Data Sheet
PDF 78.06KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD2686 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
2 | 2SD2686 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
3 | 2SD2688LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SD2689 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | 2SD2689LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |