2SD2462 - Toshiba Semiconductor

2SD2462 NPN Transistor

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Colle.

Features

solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). www.DataSheet4U.com 1 2006-11-21 2SD2462 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO .