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Power Transistors 2SD2467 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation.
q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 80 7 6 3 30 2 150
–55 to +150 Unit V V V A A W ˚C ˚C
15.0±0.3
3.0±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2460 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2461 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2462 |
Toshiba Semiconductor |
NPN Transistor |
|
| 4 | 2SD2465 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2466 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2466A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2468 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2469 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD2469 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SD2469A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD2400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD2400 |
INCHANGE |
NPN Transistor |
|