·With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W(TC=25 ) APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Col.
breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50µA ;IE=0 IE=50µA ;IC=0 IC=1A ;IB=0.1A IC=1A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V;f=30MHz IE=0; VCB=10V; f=1MHz 60 MIN 120 120 5 www.datasheet4u.com 2SD2400 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V V 2.0 1.5 1.0 1.0 320 80 20 V V µA µA MHz pF hFE Classifications D 60-120 E 100-20.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1569 ·M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2400A |
Rohm |
Power Transistor | |
2 | 2SD2401 |
Sanken electric |
Silicon NPN Transistor | |
3 | 2SD2401 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD2401 |
INCHANGE |
NPN Transistor | |
5 | 2SD2402 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
6 | 2SD2403 |
Renesas |
NPN Transistor | |
7 | 2SD2406 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
8 | 2SD2406 |
INCHANGE |
NPN Transistor | |
9 | 2SD2407 |
Panasonic |
NPN Transistor | |
10 | 2SD2413 |
HOTTECH |
GENERAL PURPOSE TRANSISTOR | |
11 | 2SD2413 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SD2413 |
GME |
Silicon NPN triple diffusion planer type Transistor |