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2SD2462 |
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| Part Number | 2SD2462 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation volt... |
| Features |
solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
www.DataSheet4U.com
1
2006-11-21
2SD2462
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO ... |
| Document |
 2SD2462 Data Sheet
PDF 154.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2460 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2461 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2465 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD2466 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2466A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|