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Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm s Features q q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing.
q q q q q
4.5±0.1 1.6±0.2
1.5±0.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0
–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current.
2SD2413 - GME
Silicon NPN triple diffusion planer type FEATURES High collector to base voltage VCBO. High collector to emitter v.
2SD2413 - HOTTECH
REPLACEMENT TYPE :2SD2413 FEATURES High Collector to Base Voltage VCBO High Collector to Emitter Voltage VCEO Lar.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2414 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2416 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD2400 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2400A |
Rohm |
Power Transistor |
|
| 6 | 2SD2401 |
Sanken electric |
Silicon NPN Transistor |
|
| 7 | 2SD2401 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD2401 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD2402 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 10 | 2SD2403 |
Renesas |
NPN Transistor |
|
| 11 | 2SD2406 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2406 |
INCHANGE |
NPN Transistor |
|