2SD2414 - Toshiba Semiconductor

2SD2414 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: mm · Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cu.

Features

Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 4 A IC = 4 A, IB = 0.4 A IC = 4 A, IB = 0.4 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ton 20 µs Input IB1 Output IB1 IB2 10 Ω tstg IB2 VCC ≈ 30 V tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% Min Typ. Max Unit ― ― 5 µA ― ― 5 µA 80 ― ― V 100 ― 320 30 ― ― ― 0.25 0.5 V ― 0.9 1.4 V ― 10 ― MHz ― 200 ― pF ― 0.4 ― ― 2.5 ― µs ― 0.5 ― Marking D2414 Product No. Lot No. Explanation of Lot No. .