2SD2406 - Toshiba Semiconductor

2SD2406 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications 2SD2406 Unit: mm • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Coll.

Features

iba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 80 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 m.