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Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 1.6±0.15 Unit: mm s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic inserti.
q q q
0.4
0.8±0.1
0.4
0.2
–0.05 0.15
–0.05
+0.1
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD221 |
Sanken |
NPN Transistor |
|
| 2 | 2SD2210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 3 | 2SD2211 |
Rohm |
Power Transistor |
|
| 4 | 2SD2212 |
Rohm |
Medium Power Transistor |
|
| 5 | 2SD2213 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2215 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2215A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2217 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 9 | 2SD2218 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD2219 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 11 | 2SD220 |
Sanken |
NPN Transistor |
|
| 12 | 2SD2200 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|