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Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 2.6±0.1 0.4max. s Features q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C) Ratings 25 20 12 1 0.5 * 45° 1.0–0.2 .
q q q
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C)
Ratings 25 20 12 1 0.5
*
45°
1.0
–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0
–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
2
1
marking
1 150
–55 ~ +150
EIAJ:.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD221 |
Sanken |
NPN Transistor |
|
| 2 | 2SD2211 |
Rohm |
Power Transistor |
|
| 3 | 2SD2212 |
Rohm |
Medium Power Transistor |
|
| 4 | 2SD2213 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2215 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2215A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2216 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2217 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 9 | 2SD2218 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD2219 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 11 | 2SD220 |
Sanken |
NPN Transistor |
|
| 12 | 2SD2200 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|