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Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 10.0 –0. High collector to base voltage VCBO I type package enab.
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
10.0
–0.
High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
7.2±0.3
0.8±0.2
1.1±0.1
1.0±0.2
+0.3
0.85±0.1 0.4±0.1
0.75±0.1
2.3±0.2 4.6±0.4
Ratings 350 400 250 300 5 1.5 0.75 15 1.3 150
–55 to +150
Unit V
1
2
3
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
emitter voltage 2.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2215 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD221 |
Sanken |
NPN Transistor |
|
| 3 | 2SD2210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 4 | 2SD2211 |
Rohm |
Power Transistor |
|
| 5 | 2SD2212 |
Rohm |
Medium Power Transistor |
|
| 6 | 2SD2213 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2216 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2217 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 9 | 2SD2218 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD2219 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 11 | 2SD220 |
Sanken |
NPN Transistor |
|
| 12 | 2SD2200 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|