2SD2216 |
Part Number | 2SD2216 |
Manufacturer | Panasonic Semiconductor |
Description | Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 1.6±0.15 Unit: mm s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High foward cu... |
Features |
q q q
0.4
0.8±0.1
0.4
0.2 –0.05 0.15 –0.05 +0.1 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings... |
Document |
2SD2216 Data Sheet
PDF 36.88KB |
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