2SD2179 Silicon PNP Transistor Datasheet

2SD2179 Silicon PNP Transistor

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with th.

Features

q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1 Symbol VCBO VCEO VEBO ICP IC PC
* Tj Tstg Ratings 50 50 5 7 5 1 150
–55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. .

The same part from a different manufacturer

2SD2179 - Panasonic Semiconductor

Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6..

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