2SD2177A - Panasonic Semiconductor

2SD2177A Silicon NPN Transistor

Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base.

Features

q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*1 (Ta=25˚C) Ratings 60 60 5 2 3 1 150
  –55 ~ +150 1cm2 Unit 0.45
  –0.05 0.45
  –0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC ICP PC
*1 Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+
  – 0.05 Note: In addition to the lead type sh.