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Ordering number:EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. www.DataSheet4U.com · Small-sized package making it easy to provide highdensi.
· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between base and emitter.
· Large current capacity. www.DataSheet4U.com
· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038
[2SB1397/2SD2100]
( ) : 2SB1397
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2101 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2101 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2102 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD2102 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 6 | 2SD2103 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2104 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2104 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD2105 |
Hitachi |
Silicon NPN Transistor |
|
| 10 | 2SD2105 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
|
| 11 | 2SD2106 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2106 |
INCHANGE |
NPN Transistor |
|