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www.DataSheet4U.com Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current C.
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1
* hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD217 |
ETC |
(2SD217 / 2SD218) NPN SILICON EPITAXIAL MESA TRANSISTOR |
|
| 2 | 2SD2170 |
Rohm |
Medium Power Transistor |
|
| 3 | 2SD2171S |
Rohm |
(2SDxxxx) MEDIUM POWER TRANSISTOR |
|
| 4 | 2SD2176 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SD2177 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2177A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2179 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2179 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD2101 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD2101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD2101 |
INCHANGE |
NPN Transistor |
|