Transistors Power Transistor (31±4V, 2A) 2SD2167 2SD2167 zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) zExternal dimensions (Unit : mm) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 ROHM : MPT3.
1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) zExternal dimensions (Unit : mm) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 ROHM : MPT3 EIAJ : SC-62 4.0 1.0 2.5 0.5 (1) (2) (3) (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO 31±4 31±4 Emitter-base voltage Collector current VEBO IC 5 2 3 Collector power dissipation PC 0..
SMD Type www.DataSheet4U.com Transistors Power Transistor 2SD2167 Features Built-in zener diode between collector and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2161 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2SD2161 |
NEC |
NPN Transistor | |
3 | 2SD2162 |
Renesas |
NPN Transistor | |
4 | 2SD2162 |
INCHANGE |
NPN Transistor | |
5 | 2SD2163 |
NEC |
NPN Transistor | |
6 | 2SD2163 |
INCHANGE |
NPN Transistor | |
7 | 2SD2164 |
NEC |
NPN Silicon Epitaxial Transistor | |
8 | 2SD2165 |
NEC |
NPN Transistor | |
9 | 2SD2165 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 2SD2166 |
Rohm |
Transistor | |
11 | 2SD2166 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |