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of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• Mold package that does not require an insulating board or insulation bushing
• High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg .
2SD2163 - INCHANGE
·High DC Current Gain- : hFE = 1000(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2161 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SD2161 |
NEC |
NPN Transistor |
|
| 3 | 2SD2162 |
Renesas |
NPN Transistor |
|
| 4 | 2SD2162 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2164 |
NEC |
NPN Silicon Epitaxial Transistor |
|
| 6 | 2SD2165 |
NEC |
NPN Transistor |
|
| 7 | 2SD2165 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SD2166 |
Rohm |
Transistor |
|
| 9 | 2SD2166 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | 2SD2167 |
ROHM |
Power Transistor |
|
| 11 | 2SD2167 |
Guangdong Kexin Industrial |
Power Transistor |
|
| 12 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|