Transistors Low VCE(sat) Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-.
1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-229-D204) 252 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE 253 Transistors hFE values are classified as follows : 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FElectrical characteristic curves 254 Transistors 2SD2098 .
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, 2SB1436 。 Low VCE(sat), excellen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2161 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2SD2161 |
NEC |
NPN Transistor | |
3 | 2SD2162 |
Renesas |
NPN Transistor | |
4 | 2SD2162 |
INCHANGE |
NPN Transistor | |
5 | 2SD2163 |
NEC |
NPN Transistor | |
6 | 2SD2163 |
INCHANGE |
NPN Transistor | |
7 | 2SD2164 |
NEC |
NPN Silicon Epitaxial Transistor | |
8 | 2SD2165 |
NEC |
NPN Transistor | |
9 | 2SD2165 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 2SD2167 |
ROHM |
Power Transistor | |
11 | 2SD2167 |
Guangdong Kexin Industrial |
Power Transistor | |
12 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |