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2SD2051 |
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| Part Number | 2SD2051 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device ... |
| Features |
DITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage
IC=0.1mA; IE= 0 IE= 3mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—Bandwidth Product
VEB= 5V; IC= 0 IC= 1A; VCE= 10V IC= 10mA; VCE= 10V
2SD2051
MIN TYP. MAX UNIT
50
70
V
50
70
V
5
V
1.5
V
2.2
V
1
μA
3.0
mA
4000
40000
200... |
| Document |
 2SD2051 Data Sheet
PDF 189.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2050 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SD2051 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2052 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD2052 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2052 |
SavantIC |
SILICON POWER TRANSISTOR |
|