Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD2015 Darlington Equivalent C circuit B (3kΩ) (500Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 150 V VCEO 120 V VEBO 6 V IC 4 A IB 0.5 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sEle.
2
13.0min
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Part No.
BCE
b. Lot No.
Collector Current IC(A) 125˚C (Case Temp) 25˚C (Case Temp)
–30˚C (Case Temp)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Collector Current IC(A)
I C
– V CE Characteristics (Typical)
4
IB=1mA
0.8mA
0.6mA
0.5mA 3
0.4mA
2 0.3mA
1
V CE( s a t )
– I B Characteristics (Typical)
3
I C
– V BE Temperature Characteristics (Typical)
(VCE=4V) 4
3 2
2 IC=4A
1
3A 2A
1A 1
0
0
1
2
3
4
5
6
Collector-Emitter Voltage VCE(V)
0 0.2
1
.
2SD2015 - SavantIC
·With TO-220F package ·DARLINGTON APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications PIN.
2SD2015 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD201 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD201 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2010 |
ROHM |
NPN Transistor |
|
| 4 | 2SD2012 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SD2012 |
STMicroelectronics |
NPN Silicon Power Transistor |
|
| 6 | 2SD2012 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2012 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2012 |
MCC |
NPN Silicon Power Transistors |
|
| 9 | 2SD2014 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SD2014 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD2014 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD2016 |
Sanken electric |
Silicon NPN Transistor |
|