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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to Type 2SB1257 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid, relay and motor,.
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD2014 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A ; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IE= -0.1A ; VCE= 12V 75 MHz COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 45 pF Switching t.
2SD2014 - Sanken electric
2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to .
2SD2014 - SavantIC
·With TO-220F package ·DARLINGTON ·Complement to type 2SB1257 APPLICATIONS ·Driver for solenoid,relay and motor, series .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD201 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD201 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2010 |
ROHM |
NPN Transistor |
|
| 4 | 2SD2012 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SD2012 |
STMicroelectronics |
NPN Silicon Power Transistor |
|
| 6 | 2SD2012 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2012 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2012 |
MCC |
NPN Silicon Power Transistors |
|
| 9 | 2SD2015 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SD2015 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD2015 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD2016 |
Sanken electric |
Silicon NPN Transistor |
|