2SD2015 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD2015

INCHANGE
2SD2015
2SD2015 2SD2015
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Part Number 2SD2015
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-t...
Features PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 2V fT Current-Gain—Bandwidth Product IE= -0.1A; VCE= 12V COB Output Capacitance VCB= 10V, ftest= 1MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A; IB1= IB2= 10mA; RL= 20Ω; VCC= 40V 2SD2015 MIN TYP. MAX UNIT 120 V 1...

Document Datasheet 2SD2015 Data Sheet
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