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2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 200 V VEBO 6 V IC 3 A IB 0.5 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristic.
.5mA
1mA
0.5mA 2
IB=0.3mA
1
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t )
– I B Characteristics (Typical)
3
I C
– V BE Temperature Characteristics (Typical)
(VCE=4V) 3
Collector Current IC(A) 125˚C (Case Temp) 25˚C (Case Temp)
–55˚C (Case Temp)
2
1 125˚C
25˚C
–5 5 ˚ C
0 0.2
1 Base Current IB(mA)
2
1
0
3
0
1
2
Base-Emittor Voltage VBE(V)
10000 5000
h FE
– I C Characteristics (Typical)
(VCE=4V)
1000 500
100
50
0.03
0.1
0.5
1
3
Collector Current IC(A)
DC Current Gain hFE
h FE
– I C Temperature Cha.
2SD2016 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD201 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD201 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2010 |
ROHM |
NPN Transistor |
|
| 4 | 2SD2012 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SD2012 |
STMicroelectronics |
NPN Silicon Power Transistor |
|
| 6 | 2SD2012 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2012 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2012 |
MCC |
NPN Silicon Power Transistors |
|
| 9 | 2SD2014 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SD2014 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD2014 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD2015 |
Sanken electric |
Silicon NPN Transistor |
|