2SD2014 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD2014

INCHANGE
2SD2014
2SD2014 2SD2014
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Part Number 2SD2014
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to ...
Features TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD2014 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A ; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IE= -0.1A ; VCE= 12V 75 MHz COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 45 pF Switching t...

Document Datasheet 2SD2014 Data Sheet
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