2SD2014 |
Part Number | 2SD2014 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to ... |
Features |
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD2014
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10
mA
hFE
DC Current Gain
IC= 3A ; VCE= 2V
2000
fT
Current-Gain—Bandwidth Product
IE= -0.1A ; VCE= 12V
75
MHz
COB
Output Capacitance
IE= 0; VCB= 10V,ftest= 1MHz
45
pF
Switching t... |
Document |
2SD2014 Data Sheet
PDF 206.84KB |
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