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2SD1857 - Inchange Semiconductor

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2SD1857 Silicon NPN Power Transistor

·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25.

Features

ge IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V COB Output Capacitance IE=0; VCB= 10V, ftest= 1MHz 2SD1857 MIN TYP. MAX UNIT 2 V 1.5 V 1.0 μA 1.0 μA 120 390 50 MHz 30 pF NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th.

The same part from a different manufacturer

Datasheet 2SD1857 - Rohm 2SD1857

Power Transistor (120V, 2A) 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacit.

Datasheet 2SD1857 - BLUE ROCKET ELECTRONICS 2SD1857

TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,,。 High breakdown voltage ,Low colle.

Datasheet 2SD1857 - UTC 2SD1857

, at any time and without notice. This document supersedes and replaces all information supplied prior to the publicatio.

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