2SD1850 - Inchange Semiconductor

2SD1850 Power Transistor

·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1.

Features

n Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1300V; IE= 0 fT Transition Frequency IC= 1A; VCE= 10V Switching Times, Resistive Load ts Storage Time tf Fall Time IC= 6A; IB1= 1.5A; IB2= 3A, VCC= 200V 2SD1850 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 5 25 4.5 10 μA 1.0 mA 2 MHz 1.5 μs 0.2 μs NOTICE： ISC reserves the rights to make changes.